Samsung MV-3T4G3/US 4 GB (1 x 4 GB) DDR3-1600 SODIMM CL11 Memory
Samsung MV-3T4G3/US 4 GB (1 x 4 GB) DDR3-1600 SODIMM CL11 Memory
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Specifications
ManufacturerSamsung
Part #MV-3T4G3/US
SpeedDDR3-1600
Form Factor204-pin SODIMM (DDR3)
Modules1 x 4GB
ColorBlack
First Word Latency13.75 ns
CAS Latency11
Voltage1.35 V
ECC / RegisteredNon-ECC / Unbuffered
Heat SpreaderNo